Tensile and compressive mechanical behavior of twinned silicon carbide nanowires

Acta Materialia

Volumn 58, Issue 6, 2010, Pages 1963-1971

  Wang, Z G ^a,b   Li, J B ^b   Gao, F ^c   Weber, W J ^c  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c PACIFIC NORTHWEST NATIONAL LABORATORY   (United States)

Author keywords

Buckling; Fracture; Molecular dynamics; Nanotructures; Twinning

Indexed keywords

ATOMIC CHAINS; AXIAL COMPRESSIVE STRAIN; AXIAL TENSILE STRAIN; COMPRESSIVE MECHANICAL BEHAVIOR; COMPRESSIVE STRAIN; CRITICAL STRAINS; FAILURE BEHAVIORS; MOLECULAR DYNAMICS SIMULATIONS; NANOTRUCTURES; SHELL BUCKLING; SIC NANOWIRE; SILICON CARBIDE NANOWIRES; TENSION STRAIN; TERSOFF POTENTIAL;

BUCKLING; CEMENTS; FAILURE ANALYSIS; FRACTURE; MOLECULAR DYNAMICS; NANOWIRES; SILICON CARBIDE; STACKING FAULTS;

TENSILE STRAIN;

EID: 76249127978     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2009.11.039     Document Type: Article

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