Growth of Β -SiC nanowires and thin films by metalorganic chemical vapor deposition using dichloromethylvinylsilane

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1722-1725

  Kang, B C ^a   Lee, S B ^a   Boo, J H ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CATALYSTS; ELECTRONIC EQUIPMENT; ENERGY DISPERSIVE SPECTROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOSTRUCTURED MATERIALS; SILICON CARBIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPOSITION PRESSURES; DEPOSITION TEMPERATURES; NANOWIRES;

THIN FILMS;

EID: 31144454021     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1949221     Document Type: Article

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