Synthesis and characterization of 3C-SiC nanowires

Journal of Non-Crystalline Solids

Volumn 354, Issue 47-51, 2008, Pages 5227-5229

  Attolini, G ^a   Rossi, F ^a   Bosi, M ^a   Watts, B E ^a   Salviati, G ^a  

^a IMEM CNR   (Italy)

Author keywords

Nanowires; Planar defects; Silicon carbide

Indexed keywords

CARBON MONOXIDE; ELECTRIC WIRE; MICROSCOPIC EXAMINATION; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; SILICON; SILICON CARBIDE; SILICON WAFERS; SINGLE CRYSTALS; STACKING FAULTS;

AMORPHOUS OXIDE SHELLS; CRYSTAL SILICONS; PLANAR DEFECTS; ROTATIONAL TWINS; SIC NANOWIRES; SILICON CARBIDE NANOWIRES; SYNTHESIS AND CHARACTERIZATIONS; THIN WIRES;

CARBOTHERMAL REDUCTION;

EID: 55349146902     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2008.05.064     Document Type: Article

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