AlGaN/GaN HFETs fabricated from maskless selectively grown mesas on Si(111) substrates

Electronics Letters

Volumn 43, Issue 22, 2007, Pages 1230-1231

  Bardwell, J A ^a   Haffouz, S ^a   Kochtane, A ^a   Lester, T ^a   Storey, C ^a   Tang, H ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; TRANSCONDUCTANCE;

CURRENT COLLAPSE; GROWN MESAS; MASKLESS; MITIGATING;

SILICON;

EID: 35449003554     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20072039     Document Type: Article

References (5)

1. Dumka, D.C., Lee, C., Tserng, H.Q., Saunier, P., and Kumar, M.: ' AlGaN/GaN HEMTs on Si substrate with 7W/mm output power density at 10GHz ', Electron. Lett., 40, (16), p. 1023-1024 10.1049/el:20045292 0013-5194
2. Feltin, E., Beaumont, B., Laügt, M., de Mierry, P., Vennéguès, P., Lahrèche, H., Leroux, M., and Gibart, P.: ' Stress control in GaN grown on silicon(111) by metalorganic vapor phase epitaxy ', Appl. Phys. Lett., 2001, 79, (20), p. 3230-3232 10.1063/1.1415043 0003-6951
3. Dadgar, A., Bläsing, J., Diez, A., Alam, A., Heuken, M., and Krost, A.: ' Metalorganic chemical vapor phase epitaxy of crack-free GaN on Si (111) exceeding 1m in thickness ', Jpn. J. Appl. Phys., 2000, 39, (11B), p. L1183-L1185 10.1143/JJAP.39.L1183 0021-4922
4. Tang, H., Haffouz, S., and Bardwell, J.A.: ' Si(111) substrates as highly effective pseudomask for selective growth of GaN material and devices by ammonia molecular beam epitaxy ', Appl. Phys. Lett., 2006, 88, p. 172110-1-172110-3 0003-6951
5. Haffouz, S., Tang, H., Bardwell, J.A., and Rolfe, S.: ' Growth of crack-free, carbon-doped GaN and AlGaN/GaN high electron mobility transistor tructures on Si(111) substrates by ammonia molecular beam epitaxy ', Appl. Phys. Lett., 2006, 88, p. 252114-1-252114-3 0003-6951