Amplified piezoelectric transduction of nanoscale motion in gallium nitride electromechanical resonators

Applied Physics Letters

Volumn 94, Issue 23, 2009, Pages

  Faucher, Marc ^a   Grimbert, Bertrand ^a   Cordier, Yvon ^b   Baron, Nicolas ^b,c   Wilk, Arnaud ^c   Lahreche, Hac̀ne ^c   Bove, Philippe ^c   Fraņois, Marc ^a   Tilmant, Pascal ^a   Gehin, Thomas ^a   Legrand, Christiane ^a   Werquin, Matthieu ^d   Buchaillot, Lionel ^a   Gaquìre, Christophe ^a   Th́ron, Didier ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b CRHEA CNRS   (France)

^c Picogiga International   (France)

^d MC2 Technologies   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CARRIER DENSITY; ELECTROMECHANICAL RESONATORS; FLEXURAL MODES; FULLY INTEGRATED; HETEROSTRUCTURE; HIGH MOBILITY; LARGE CURRENT; MOTION DETECTORS; NANO SCALE; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC SEMICONDUCTORS; POLARIZATION FIELD; STRAIN VARIATION;

AMPLIFICATION; DETECTORS; ELECTRON GAS; GALLIUM ALLOYS; GALLIUM NITRIDE; NANOSTRUCTURED MATERIALS; PHASE INTERFACES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; RESONATORS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; TWO DIMENSIONAL ELECTRON GAS;

ELECTROMECHANICAL DEVICES;

EID: 67649099556     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3153504     Document Type: Article

References (25)

1. S. C. Masmanidis, R. B. Karabalin, I. De Vlaminck, G. Borghs, M. R. Freeman, and M. L. Roukes, Science 0036-8075 317, 780 (2007). 10.1126/science.1144793
2. K. C. Schwab and M. L. Roukes, Phys. Today 0031-9228 58, 36 (2005).
3. K. L. Ekinci and M. L. Roukes, Rev. Sci. Instrum. 0034-6748 76, 061101 (2005). 10.1063/1.1927327
4. J. R. Clark, W. -T. Hsu, M. A. Abdelmoneum, and C. T.-C. Nguyen, J. Microelectromech. Syst. 1057-7157 14, 1298 (2005). 10.1109/JMEMS.2005.856675
5. J. E. Y. Lee, Y. Zhu, and A. A. Seshia, J. Micromech. Microeng. 0960-1317 18, 064001 (2008). 10.1088/0960-1317/18/6/064001
6. M. D. LaHaye, O. Buu, B. Camarota, and K. C. Schwab, Science 0036-8075 304, 74 (2004). 10.1126/science.1094419
7. D. V. Scheible and R. H. Blick, Appl. Phys. Lett. 0003-6951 84, 4632 (2004). 10.1063/1.1759371
8. A. N. Cleland, M. Pophristic, and I. Ferguson, Appl. Phys. Lett. 0003-6951 79, 2070 (2001). 10.1063/1.1396633
9. R. G. Beck, M. A. Eriksson, M. A. Topinka, R. M. Westervelta, K. D. Maranowski, and A. C. Gossard, Appl. Phys. Lett. 0003-6951 73, 1149 (1998). 10.1063/1.122112
10. M. Eickhoff, O. Ambacher, G. Krötz, and M. Stutzmann, J. Appl. Phys. 0021-8979 90, 3383 (2001). 10.1063/1.1398602
11. H. C. Nathanson, W. E. Newell, R. A. Wickstrom, and J. Ransford Davis, IEEE Trans. Electron Devices 0018-9383, 14, 117 (1967). 10.1109/T-ED.1967.15912
12. C. Durand, F. Casset, P. Renaux, N. Abeĺ, B. Legrand, D. Renaud, E. Ollier, P. Ancey, A. M. Ionescu, and L. Buchaillot, IEEE Electron Device Lett. 0741-3106 29, 494 (2008). 10.1109/LED.2008.919781
13. S. Nakamura, Y. Harada, and M. Seno, Appl. Phys. Lett. 0003-6951 58, 2021 (1991). 10.1063/1.105239
14. F. Semond, Y. Cordier, N. Grandjean, F. Natali, B. Damilano, S. V́zian, and J. Massies, Phys. Status Solidi A 0031-8965 188, 501 (2001). 10.1002/1521-396X(200112)188:2<501::AID-PSSA501>3.0.CO;2-6
15. Y. Cordier, F. Semond, P. Lorenzini, N. Grandjean, F. Natali, B. Damilano, J. Massies, V. Hol, A. Minko, N. Vellas, C. Gaquìre, J. C. DeJaeger, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, J. -C. Grattepain, R. Aubry, and S. L. Delage, J. Cryst. Growth 0022-0248 251, 811 (2003). 10.1016/S0022-0248(02)02149-8
16. K. Brueckner, F. Niebelschuetz, K. Tonisch, S. Michael, A. Dadgar, A. Krost, V. Cimalla, O. Ambacher, R. Stephan, and M. A. Hein, Appl. Phys. Lett. 0003-6951 93, 173504 (2008). 10.1063/1.3002296
17. I. Mahboob and H. Yamaguchi, Nat. Nanotechnol. 1748-3387 3, 275 (2008). 10.1038/nnano.2008.84
18. D. L. DeVoe, Sens. Actuators, A 0924-4247 88, 263 (2001). 10.1016/S0924-4247(00)00518-5
19. See EPAPS Document No. E-APPLAB-94-019924 for materials, methods, and piezoelectric coefficients. For more information on EPAPS, see http://www.aip.org/pubservs/epaps.html.
20. S. Timoshenko, D. H. Young, and W. Weaver, Vibration Problems in Engineering, 2nd ed. (Wiley, New York, 1974).
21. The measured signal apart from resonances shows no capacitive behavior. It has a flat frequency response corresponding to a 14 M resistance, whose origins are probably the technological imperfections of the isolation combined to residual conduction in the GaN buffer.
22. L. D. Landau and E. M. Lifschitz, Der Theoretischen Physik-Mechanik, 3rd ed. (Berlin Akademie, Berlin, 1964).
23. O. Ambacher, B. Foutz, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, A. J. Sierakowski, W. J. Schaff, L. F. Eastman, R. Dimitrov, A. Mitchell, and M. Stutzmann, J. Appl. Phys. 0021-8979 87, 334 (2000). 10.1063/1.371866
24. V. Cimalla, J. Pezoldt, and O. Ambacher, J. Phys. D 0022-3727 40, 6386 (2007). 10.1088/0022-3727/40/20/S19
25. Y. Cordier, E. Semond, J. Massies, B. Dessertene, S. Cassette, M. Surrugue, D. Adam, and S. L. Delage, Electron. Lett. 0013-5194 38, 91 (2002). 10.1049/el:20020060