Analogue dynamic supply voltage L-band GaN high power amplifier with improvement of efficiency and linearity

IEEE MTT-S International Microwave Symposium Digest

Volumn , Issue , 2007, Pages 1107-1110

  Matsunaga, Kohji ^a   Tanomura, Masahiro ^a   Nakayama, Tatsuo ^a   Ando, Yuij ^a   Miyamoto, Hironobu ^a   Shimawaki, Hidenori ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Analogue dynamic voltage; Efficiency; GaN; Linearity; Power amplifiers

Indexed keywords

CODE DIVISION MULTIPLE ACCESS; DRAIN CURRENT; ELECTRIC CONVERTERS; ENERGY DISSIPATION; GALLIUM NITRIDE; VOLTAGE CONTROL;

ANALOGUE DYNAMIC VOLTAGE; DRAIN EFFICIENCY; SUPPLY VOLTAGE;

POWER AMPLIFIERS;

EID: 34748815683     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2007.380287     Document Type: Conference Paper

References (4)

1. D.F.Kimball, et.al, "High-Efficiency Envelope-Tracking W-CDMA Base-Statio Amplifier Using GaN HFETs," IEEE Trans. Microw. Theory Tech., vol.54, no.11, pp.3848-3856, Nov. 2006.
2. D.F.Kimball, et. al, "50% PAE WCDMA Basestation Amplifier Implemented with GaN HFETs," 2005 IEEE Compound Semicond. Integr. Circuit Symp., Oct. 2005, pp.89-92.
3. A.M.Conway, et. al, "Dynamic Gate Bias Technique for Improved Linearity of GaN HFET Power Amplifiers," 2005 IEEE MTT-S Int. Microwave Symp. Dig., Session WEIE.
4. Y.Ando, et. al, "12 W/mm recessed-gate AlGaN/GaN heterojunction field-plate FET," IEEE IEDM Tech. Dig., 2003, pp.563-566.