Windowed growth of AlGaN/GaN heterostructures on Silicon 〈111〉 substrates for future MOS integration

Physica Status Solidi (A) Applications and Materials Science

Volumn 206, Issue 2, 2009, Pages 371-374

  Chyurlia, P ^a   Semond, F ^b   Lester, T ^c   Bardwell, J A ^c   Rolfe, S ^c   Cordier, Y ^b   Baron, N ^b   Moreno, J C ^b   Tarr, N G ^a  

^a CARLETON UNIVERSITY   (Canada)

^b CRHEA CNRS   (France)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AFM; ALGAN/GAN; ALGAN/GAN HEMT; ALGAN/GAN HETEROSTRUCTURES; C-DOPED; DIELECTRIC STACKS; GAN BUFFERS; GROWTH TECHNIQUES; OXYGEN IMPURITIES; RMS ROUGHNESS; SACRIFICIAL OXIDES; SILICON SURFACES;

GALLIUM NITRIDE; GALVANOMAGNETIC EFFECTS; HALL MOBILITY; OXYGEN; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM; STRESS RELIEF;

SEMICONDUCTING SILICON;

EID: 62549120333     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200824452     Document Type: Conference Paper

References (14)

1. F. Semond, Y. Cordier et al., Phys. Status Solidi A 188, 501-510 (2001).
2. F. Schulze, A. Dadgar et al., Appl. Phys. Lett. 84, 4747 (2005).
3. S. Joblot, F. Semond et al., Appl. Phys. Lett. 87, 133505 (2005).
4. F. Schulze, A. Dadgar et al., Mater. Res. Soc. Spring Meeting, Symp. C, March 24-28, San Francisco, 2008.
5. Y. Cordier, J.-C. Moreno et al., IEEE Electron. Device Lett. 29, 11 (2008).
6. J.-M. Bethoux, P. Vennegues et al., J. Appl. Phys. 94, 6499 (2003).
7. D. Cheng, M. A. Gonsalvez et al., Sens. Actuators A 125, 415-421 (2006).
8. D. Resnick and D. Vrtacnick et al., J. Micromech. Microeng. 13, 26-34 (2003).
9. R. Houbertz, U. Memmert et al., Surface Science 396, 198-211 (1998).
10. H. Fukidome, M. Matsumura et al., Appl. Surf. Sci. 130, 146-150 (1998).
11. H. J. Lewerz, H. Jungblut et al., Electrochim. Acta 45, 4615-4627 (2000).
12. J. A. Bardwell, S. Haffouz et al., Electron. Lett. 43, 22 (2007).
13. E. Kasper, H. J. Herzog et al., J. Cryst. Growth (81), 458-462 (1987).
14. J. B. Webb, H. Tang et al., Appl. Phys. Lett. 75, 7 (1999).