Hole mobilities in pseudomorphic Si1-x-yGexCy alloy layers

Thin Solid Films

Volumn 336, Issue 1-2, 1998, Pages 336-339

  Duschl, R ^a   Seeberger, H ^a   Eberl, K ^a  

^a MAX PLANCK INSTITUT FÜR FESTKÖRPERFORSCHUNG   (Germany)

Author keywords

Boron activation energy; Pseudomorphic SiGeC; Silicon compounds; Transport properties

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRON TRANSPORT PROPERTIES; SEMICONDUCTING BORON; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM WELLS; SILICON ALLOYS; STRAIN; THERMAL EFFECTS;

SILICON GERMANIUM CARBIDE;

HETEROJUNCTIONS;

EID: 0032312518     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01251-6     Document Type: Article

References (16)

1. T. Schaffler, et al., Semicond. Sci. Technol 12 (1997) 1515.
2. Properties of Strained and Relaxed Silicon Germanium, edited by E. Kasper,EMIS Datareviews Series No 12, 1995
3. K. Eberl, et al., Appl. Phys. Lett. 60 (1992) 3033.
4. S.C. Jain, et al., Semicond. Sci. Technol. 10 (1995) 1289.
5. H.J. Osten, et al., J. Appl. Phys. 82 (1997) 4977.
6. O.G. Schmidt, et al., Phys. Rev. Lett. 80 (1998) 3396.
7. K. Eberl, in: R. Helbig (Ed.), Festkorperprobleme, Advances in Solid State Physic, Vol. 37, Vieweg, Braunschweig/Wiesbaden, p. 27.
8. P.C. Kelires, et al., Phys. Rev. B. 55 (1997) 8784.
9. L.C. Kimerling, et al., Mater. Sci. Forum 38-41 (1989) 141.
10. Y. Fu, et al., Phys. Rev. B 54 (1996) 11317.
11. P. Gaworzewski, et al., J. Appl. Phys. 83 (1998) 5258.
12. T. Manku, et al., Phys. Rev. B 43 (1991) 12634.
13. G.F. Neumark, et al., J. Appl. Phys. 52 (1981) 885.
14. F.L. Madrasz, et al., J. Appl. Phys. 52 (1981) 4646.
15. T.K. Carns, et al., IEEE Trans. Electron Devices 41 (1994) 1273.
16. T.E. Whall, J. Cryst. Growth 157 (1995) 353.