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Volumn 8, Issue 1-3 SPEC. ISS., 2005, Pages 283-288

SiGeC HBTs: The TCAD Challenge Reduced to Practice

Author keywords

HBT; SiGeC; TCAD

Indexed keywords

BORON; CARBON; CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; DIFFUSION; MATHEMATICAL MODELS; OPTIMIZATION; RATE CONSTANTS; SEMICONDUCTING SILICON COMPOUNDS; STRAIN;

EID: 13244276339     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2004.09.086     Document Type: Conference Paper
Times cited : (5)

References (9)
  • 1
    • 13244271217 scopus 로고    scopus 로고
    • Avant! Corporation
    • TSUPREM-4 Manual, Avant! Corporation
    • TSUPREM-4 Manual
  • 3
    • 0000872060 scopus 로고    scopus 로고
    • Boron diffusion across silicon-silicon germanium boundaries
    • R. Lever, J.M. Bonar, and A.F.W. Willoughby Boron diffusion across silicon-silicon germanium boundaries J Appl Phys 83 4 1998 1988
    • (1998) J Appl Phys , vol.83 , Issue.4 , pp. 1988
    • Lever, R.1    Bonar, J.M.2    Willoughby, A.F.W.3
  • 4
    • 0001759052 scopus 로고    scopus 로고
    • The contribution of vacancies to carbon out-diffusion in silicon
    • R.F. Scholz, P. Werner, U. Gosele, and T.Y. Tan The contribution of vacancies to carbon out-diffusion in silicon Appl Phys Lett 74 3 1999 392
    • (1999) Appl Phys Lett , vol.74 , Issue.3 , pp. 392
    • Scholz, R.F.1    Werner, P.2    Gosele, U.3    Tan, T.Y.4
  • 5
    • 0035881374 scopus 로고    scopus 로고
    • Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation
    • J.L. Ngau, P.B. Griffin, and J.D. Plummer Modeling the suppression of boron transient enhanced diffusion in silicon by substitutional carbon incorporation J Appl Phys 90 4 2001 1768
    • (2001) J Appl Phys , vol.90 , Issue.4 , pp. 1768
    • Ngau, J.L.1    Griffin, P.B.2    Plummer, J.D.3
  • 7
    • 0142229635 scopus 로고    scopus 로고
    • High-frequency noise in SiGe HBTs
    • Herzel F, High-frequency noise in SiGe HBTs, Mater Sci Semicond Process, 2003; (6): 119
    • (2003) Mater Sci Semicond Process , Issue.6 , pp. 119
    • Herzel, F.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.