Rigorous modeling approach to numerical simulation of SiGe HBTs

Applied Surface Science

Volumn 224, Issue 1-4, 2004, Pages 361-364

  Palankovski, V ^a   Rohrer G ^b   Grasser, T ^a   Smirnov, S ^a   Kosina, H ^a   Selberherr, S ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

^b AMS AG   (Austria)

Author keywords

Bandgap; HBT; Mobility; Modeling; Numerical simulation; SiGe

Indexed keywords

COMPUTER SIMULATION; CRYSTAL LATTICES; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON MOBILITY; ENERGY GAP; IMPACT IONIZATION; MONTE CARLO METHODS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

BANDGAP; SIGE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 1142292381     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.09.034     Document Type: Conference Paper

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