Integration of resistive switching NiO in small via structures from localized oxidation of nickel metallic layer

ESSDERC 2008 - Proceedings of the 38th European Solid-State Device Research Conference

Volumn , Issue , 2008, Pages 218-221

  Courtade, L ^a   Turquat, Ch ^a   Lisoni, J G ^b   Goux, L ^b   Wouters, D J ^b   Deleruyelle, D ^c   Muller, Ch ^c  

^a UNIVERSITÉ DE TOULON   (France)

^b IMEC   (Belgium)

^c AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

Binary oxides; Bipolar switching phenomena; Resistive switching memories; Via arrays

Indexed keywords

DATA STORAGE EQUIPMENT; METALLIC COMPOUNDS; OXIDATION; OXIDE FILMS; SWITCHING SYSTEMS; TRANSITION METAL COMPOUNDS; TRANSITION METALS;

BINARY OXIDES; BIPOLAR SWITCHING PHENOMENA; CONVENTIONAL MEMORIES; HIGH DENSITIES; INNOVATIVE PROCESSES; INTERCONNECT STRUCTURES; LOCALIZED OXIDATIONS; MEMORY CELLS; MEMORY ELEMENTS; METALLIC LAYERS; NON VOLATILES; PARTIAL OXIDATIONS; RELIABILITY PERFORMANCES; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; REVERSIBLE RESISTANCE SWITCHING; SCALING LIMITS; SPUTTERING TECHNIQUES; VIA ARRAYS; VIA HOLES;

SWITCHING;

EID: 58049107317     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2008.4681737     Document Type: Conference Paper

References (15)

1. 2", Solid-State Electronics, vol. 50, no.4, p. 601, 2006.
2. T.W. Hickmott, J. Appl. Phys., vol. 36, p.1885, 1965.
3. J. F. Gibbons, and W. E. Beadle, "Switching properties of thin NiO films", Solid-State Electronics, vol. 7, p. 785, 1964.
4. 2 thin films grown by atomic-layer deposition", J. Appl. Phys., vol. 98, no. 3, p. 033715,2005.
5. 2 thin films", Appl. Phys. Lett., vol. 86, no. 26, p. 262907, 2005.
6. I. H. Inoue et al., "Strong electron correlation effects in no-volatile electronic memory devices", Proceedings of the Non Volatile Memory Technology Symposium, 2005.
7. D. C. Kim et al., "Electrical observations of filamentary conductions for the resistive memory switching in NiO films", Appl. Phys. Lett., vol. 88, no. 20, p. 202102, 2006.
8. I. Austin, "Semiconductor Effects in Amorphous Solids" (North Holland, Amsterdam), p. 477, 1970.
9. S. Seo et al., "Reproducible resistance switching in polycrystalline NiO films", Appl. Phys. Lett., vol. 85, no. 23, p. 5655, 2004.
10. I. H. Inoue, S. Yasuda, H. Akinaga, H. Takagi, "Nonpolar resistance switching of metal/binary-transition-metal-oxides/metal sandwiches: homogenous/inhomogeneous transition of current distribution", Phys. Rev. B, vol. 77, p. 035105, 2008.
11. L. Courtade, Ch. Turquat, Ch. Muller, J.G. Lisoni, L. Goux, D.J. Wouters, D. Goguenheim, "Microstructure and resistance switching in NiO binary oxide films obtained from Ni oxidation", IEEE Proceedings of the Non Volatile Memory Technology Symposium, p. 94, 2006.
12. L. Courtade, Ch. Turquat, Ch. Muller, J.G. Lisoni, L. Goux, D.J. Wouters, D. Goguenheim, P. Roussel, L. Ortega, "Oxidation kinetics of Ni metallic films: formation of NiO-based resistive switching structures", Thin Solid Films, vol. 516, p. 4083, 2008.
13. L. Courtade, Ch. Turquat, Ch. Muller, J.G. Lisoni, L. Goux, D.J. Wouters, D. Goguenheim, "Improvement of resistance switching characteristics in NiO films obtained from controlled Ni oxidation", IEEE Proceedings of the Non Volatile Memory Technology Symposium, 2007, p. 1.
14. R. Waser, M. Aono, "Nanoionics-based resistive switching memories", Nat. Mat., vol. 6, p. 833 (2007).
15. H. Shima et al., "Resistance switching in the metal deficient-type oxides: NiO and CoO", Appl. Phys. Lett., vol. 91, no. 12, p. 012901 (2007).