Improvement of metal-semiconductor-metal GaN ultraviolet detectors

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 188-189

  Huang, Z C ^a   Mott, D B ^a   Shu, P K ^a  

^a NASA GODDARD SPACE FLIGHT CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OHMIC CONTACTS; PHOTOCONDUCTING MATERIALS; POINT DEFECTS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SPECTROSCOPY;

CONDUCTION BAND EDGE; FLOW RATES; METAL SEMICONDUCTOR METAL ULTRAVIOLET DETECTORS; RESPONSIVITY; THERMALLY STIMULATED CURRENT SPECTROSCOPY;

ULTRAVIOLET DETECTORS;

EID: 0029707457     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/drc.1996.546430     Document Type: Conference Paper

References (2)