PEMBE-growth of gallium nitride on (0001) sapphire: A comparison to MOCVD grown GaN

MRS Internet Journal of Nitride Semiconductor Research

Volumn 1, Issue , 1996, Pages

  Angerer, H ^a   Ambacher, O ^a   Dimitrov R ^a   Metzger, Th ^a   Rieger, W ^a   Stutzmann, M ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; DECOMPOSITION; ELECTRON CYCLOTRON RESONANCE; ELECTRONIC PROPERTIES; HALL EFFECT; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; PASSIVATION; SAPPHIRE; STOICHIOMETRY; SURFACE ROUGHNESS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

EXTRINSIC DEFECTS; HALL MOBILITY; PLASMA-ENHANCED MOLECULAR BEAM EPITAXY (PEMBE); RADIO FREQUENCIES (RF);

GALLIUM NITRIDE;

EID: 4043084892     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300001873     Document Type: Article

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