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Volumn 96, Issue 8, 2004, Pages 4525-4529

Efficient spin extraction from nonmagnetic semiconductors near forward-biased ferromagnetic-semiconductor modified junctions at low spin polarization of current

(2) Bratkovsky, A M a Osipov, V V a

a HEWLETT PACKARD LABORATORIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACIAL LAYERS; NONMAGNETIC SEMICONDUCTORS (NS); SPIN EXTRACTION; SPIN POLARIZATION;

CURRENT DENSITY; ELECTRON TUNNELING; FERROMAGNETIC MATERIALS; INTERFACES (MATERIALS); MAGNETORESISTANCE; POLARIZATION; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

MAGNETIC SEMICONDUCTORS;

EID: 7544230368 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.1788839 Document Type: Article

Times cited : (22)

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