Electron spin injection at a Schottky contact

Physical Review B - Condensed Matter and Materials Physics

Volumn 66, Issue 11, 2002, Pages 1133031-1133034

  Albrecht, J D ^a   Smith, D L ^a  

^a LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARTICLE; DENSITY; DEVICE; ELECTRODE; ENERGY; MAGNETISM; MODEL; PHYSICS; SEMICONDUCTOR; THEORY;

EID: 0037105181     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.66.113303     Document Type: Article

References (16)

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13. See, e.g., Ref. 12, pp. 248-260.
14. Equation (5) can be shown to reduce to a spin-diffusion equation in the limit of uniform carrier density, small electric field, and μ_Lt;kT.
15. 2/2a. Then g(z) satisfies a confluent hypergeometic equation (CHE) and has a solution of the form αM+/βU where α and β are matching coefficients and M and U are independent solutions to the CHE.
16. Transport of electrons from a spin-polarized semiconductor into a larger band-gap semiconductor was reported by I. Malajovich, J.J. Berry, N. Samarth, and D.D. Awschalom, Nature (London) 411, 770 (2001).