Fabrication and characterization of freestanding circular GaN gratings

Optics Express

Volumn 18, Issue 2, 2010, Pages 773-779

  Wang, Yongjin ^a   Hu, Fangren ^a   Sameshima, Hidehisa ^a   Hane, Kazuhiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRACTION; GALLIUM NITRIDE; NANOSTRUCTURES; NONVOLATILE STORAGE; REACTIVE ION ETCHING; SEMICONDUCTOR QUANTUM WIRES;

ACTIVE MATERIAL; ATOM BEAMS; BULK- MICROMACHINING; CIRCULAR GRATINGS; CONFINED MODES; DEEP REACTIVE ION ETCHING; FREESTANDING GAN; INTEGRATED INTENSITIES; LIGHT-EXTRACTION EFFICIENCY; MICROPHOTOLUMINESCENCE (MICRO-PL); NANO SCALE; OPTOELECTRONIC APPLICATIONS; PEAK INTENSITY; SILICON SUBSTRATES;

GALLIUM ALLOYS;

GALLIUM; GALLIUM NITRIDE; NANOMATERIAL;

ARTICLE; CHEMISTRY; EQUIPMENT; EQUIPMENT DESIGN; INSTRUMENTATION; NANOTECHNOLOGY; OPTICAL INSTRUMENTATION; REFRACTOMETRY; ULTRASTRUCTURE;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; GALLIUM; NANOSTRUCTURES; NANOTECHNOLOGY; OPTICAL DEVICES; REFRACTOMETRY;

EID: 75249087217     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.000773     Document Type: Article

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