Freestanding GaN resonant gratings at telecommunication range

IEEE Photonics Technology Letters

Volumn 21, Issue 17, 2009, Pages 1184-1186

  Wang, Yongjin ^a   Hu, Fangren ^a   Wakui, Masashi ^a   Hane, Kazuhiro ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Electron beam lithography; Etching; Gallium compounds; Resonator filters

Indexed keywords

DEEP REACTIVE ION ETCHING; DUTY RATIOS; FAST ATOM BEAMS; FREE STANDING MEMBRANES; FREESTANDING GAN; FULL-WIDTH AT HALF-MAXIMUM; GRATING PERIODS; OPTICAL RESPONSE; POLARIZATION PROPERTIES; REFLECTANCE MEASUREMENTS; RESONANT GRATINGS; RESONANT PEAKS; RESONATOR FILTERS; RIGOROUS COUPLED WAVE ANALYSIS; THEORETICAL MODELS; TRANSVERSE MAGNETIC POLARIZATION;

ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; GALLIUM ALLOYS; GALLIUM NITRIDE; MICROWAVE FILTERS; POLARIZATION; RESONATORS; SEMICONDUCTING GALLIUM;

REACTIVE ION ETCHING;

EID: 69649097341     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2009.2024221     Document Type: Article

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