Conduction intersubband transitions at normal incidence in Si 1-xGex quantum well devices

Nanotechnology

Volumn 18, Issue 7, 2007, Pages

  Virgilio, Michele ^a   Grosso, Giuseppe ^a  

^a CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; ELECTRONIC STATES; INFRARED RADIATION; OPTICAL TRANSITIONS; SILICON ALLOYS; SUPERLATTICES;

CONDUCTION STATES; MASS TENSOR; QUANTUM WELL DEVICES;

SEMICONDUCTOR QUANTUM WELLS;

GERMANIUM; SILICON;

ARTICLE; ENERGY TRANSFER; INFRARED RADIATION; MEMBRANE CONDUCTANCE; MOLECULAR MODEL; PRIORITY JOURNAL; QUANTUM CHEMISTRY; SEPARATION TECHNIQUE;

EID: 33947525539     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/7/075402     Document Type: Article

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