Rapid thermal annealing effect on charge storage characteristics in MOS capacitor with Ge nanocrystals

Journal of the Korean Physical Society

Volumn 42, Issue SPEC., 2003, Pages

  Kim, Jae Kwon ^a   Cheong, Hea Jeong ^a   Park, Kyung Hwa ^a   Kim, Yong ^a   Yi, Jae Yel ^a   Bark, Hong Jun ^a   Bang, S H ^b   Cho, J H ^b  

^a Dong A University   (South Korea)

^b Pusan National University   (South Korea)

Author keywords

Charge loss; Germanium; MOS capactor; Nanocrystal

Indexed keywords

EID: 0037307160     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (13)

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