The bond strength of Au/Si eutectic bonding studied by IR microscope

IEEE Transactions on Electronics Packaging Manufacturing

Volumn 33, Issue 1, 2010, Pages 31-37

  Jing, Errong ^a   Xiong, Bin ^a   Wang, Yuelin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

Author keywords

Au Si eutectic bonding; Bond strength; Eutectic bonding; Infrared (IR); Wafer bonding

Indexed keywords

BLACK SPOT; BOND STRENGTH; BOND STRENGTH TESTS; BONDING CONDITIONS; BONDING INTERFACES; DISSOLUTION BEHAVIOR; EUTECTIC BONDING; EUTECTIC REACTIONS; IR IMAGES; IR MICROSCOPE; SI (1 1 1); SI(1 0 0); SI(100) SURFACE;

ANISOTROPY; BOND STRENGTH (MATERIALS); DISSOLUTION; EUTECTICS; MICROSCOPES; SILICON; SILICON WAFERS; THREE DIMENSIONAL;

WAFER BONDING;

EID: 75149136527     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEPM.2009.2035307     Document Type: Article

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