메뉴 건너뛰기




Volumn 62, Issue 1-3, 1997, Pages 680-686

Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond

Author keywords

Eutectic bonding; Gold; Silicide bonding; Silicon; Wafer bonding

Indexed keywords

ADHESION; CHROMIUM; DIFFUSION IN SOLIDS; EUTECTICS; GOLD; INTERFACES (MATERIALS); LOW TEMPERATURE OPERATIONS; MICROELECTRONIC PROCESSING; SILICON WAFERS; TITANIUM;

EID: 0031177094     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0924-4247(97)01550-1     Document Type: Article
Times cited : (146)

References (30)
  • 2
    • 0025416022 scopus 로고
    • Fusion bonding for fabrication of sensors, actuators and microstructures
    • P.W. Barth, Fusion bonding for fabrication of sensors, actuators and microstructures, Sensors and Actuators, A21-A23 (1990) 919-926.
    • (1990) Sensors and Actuators , vol.A21-A23 , pp. 919-926
    • Barth, P.W.1
  • 4
    • 0026003541 scopus 로고
    • Silicon-on-insulator by wafer bonding: A review
    • W.P. Maszara, Silicon-on-insulator by wafer bonding: a review, J. Electrochem. Soc., 138 (1991) 341-347.
    • (1991) J. Electrochem. Soc. , vol.138 , pp. 341-347
    • Maszara, W.P.1
  • 6
    • 36549096828 scopus 로고
    • Dielectric isolation of silicon by anodic bonding
    • T.R. Anthony, Dielectric isolation of silicon by anodic bonding, J. Appl. Phys., 58 (1985) 1240-1247.
    • (1985) J. Appl. Phys. , vol.58 , pp. 1240-1247
    • Anthony, T.R.1
  • 8
    • 0024755127 scopus 로고
    • A model for the silicon wafer bonding process
    • [ 8] R. Stengl, T. Tan and U. Gosele, A model for the silicon wafer bonding process, Jpn. J. Appl. Phys., 28 (1988) 1735-1741.
    • (1988) Jpn. J. Appl. Phys. , vol.28 , pp. 1735-1741
    • Stengl, R.1    Tan, T.2    Gosele, U.3
  • 9
    • 0027574861 scopus 로고
    • Void-free silicon wafer bond strengthening in the 200-400°C range
    • G. Kissinger and W. Kissinger, Void-free silicon wafer bond strengthening in the 200-400°C range, Sensors and Actuators A, 36 (1993) 149-156.
    • (1993) Sensors and Actuators A , vol.36 , pp. 149-156
    • Kissinger, G.1    Kissinger, W.2
  • 11
    • 0026914356 scopus 로고
    • Characteristics of silicon wafer bond strengthening by annealing
    • M. Horiuchi and S. Aoki, Characteristics of silicon wafer bond strengthening by annealing, J. Electrochem. Soc., 139 (1992) 2589-2594.
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 2589-2594
    • Horiuchi, M.1    Aoki, S.2
  • 13
    • 0025414977 scopus 로고
    • Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass
    • M. Esashi, N. Nakano, S. Shoji and H. Hebiguchi, Low-temperature silicon-to-silicon anodic bonding with intermediate low melting point glass, Sensors and Actuators, A21-A23 (1990) 931-934.
    • (1990) Sensors and Actuators , vol.A21-A23 , pp. 931-934
    • Esashi, M.1    Nakano, N.2    Shoji, S.3    Hebiguchi, H.4
  • 14
    • 0000707524 scopus 로고
    • Low-temperature electrostatic silicon-to-silicon seals using sputtered borosilicate glass
    • A.D. Brooks, R.P. Donovan and C.A. Hardesty, Low-temperature electrostatic silicon-to-silicon seals using sputtered borosilicate glass, J. Electrochem. Soc., 119 (1972) 545-546.
    • (1972) J. Electrochem. Soc. , vol.119 , pp. 545-546
    • Brooks, A.D.1    Donovan, R.P.2    Hardesty, C.A.3
  • 15
    • 0026852566 scopus 로고
    • Low-temperature silicon wafer bonding
    • H.J. Quenzer and W. Beneke, Low-temperature silicon wafer bonding, Sensors and Actuators A, 32 (1992) 340-344.
    • (1992) Sensors and Actuators A , vol.32 , pp. 340-344
    • Quenzer, H.J.1    Beneke, W.2
  • 16
    • 0023995692 scopus 로고
    • Metal-to-metal bonding using an oxidizing ambient atmosphere
    • D. Noyak, A. Reisman and I. Turlik, Metal-to-metal bonding using an oxidizing ambient atmosphere, J. Electrochem. Soc, 135 (1988) 1023-1025.
    • (1988) J. Electrochem. Soc , vol.135 , pp. 1023-1025
    • Noyak, D.1    Reisman, A.2    Turlik, I.3
  • 18
    • 0026172698 scopus 로고    scopus 로고
    • Platinum suicide fusion bonding
    • M.S. Ismail and R.W. Bower, Platinum suicide fusion bonding, Electron. Lett., 27 1153-1155.
    • Electron. Lett. , vol.27 , pp. 1153-1155
    • Ismail, M.S.1    Bower, R.W.2
  • 21
    • 0029418990 scopus 로고
    • Patterned eutectic bonding with Al/Ge thin films for MEMS
    • [21 ] P.M. Zavracky and B. Vu, Patterned eutectic bonding with Al/Ge thin films for MEMS, Proc. SPIE, Vol. 2639, 1995, pp. 46-52.
    • (1995) Proc. SPIE , vol.2639 , pp. 46-52
    • Zavracky, P.M.1    Vu, B.2
  • 22
    • 0022097946 scopus 로고
    • A critical review of VLSI die-attachment in high-reliability applications
    • July
    • R.K. Shukla and N.P. Mencinger, A critical review of VLSI die-attachment in high-reliability applications, Solid-State Technol., (July) (1985) 67-74.
    • (1985) Solid-state Technol. , pp. 67-74
    • Shukla, R.K.1    Mencinger, N.P.2
  • 24
    • 0028429727 scopus 로고
    • Low-temperature wafer-to-wafer bonding using gold at eutectic temperature
    • R.F. Wolffenbuttel and K.D. Wise, Low-temperature wafer-to-wafer bonding using gold at eutectic temperature. Sensors and Actuators A, 43 (1994) 223-229.
    • (1994) Sensors and Actuators A , vol.43 , pp. 223-229
    • Wolffenbuttel, R.F.1    Wise, K.D.2
  • 25
    • 0009531618 scopus 로고
    • TEM of gold-silicon interactions on the backside of silicon wafers
    • P.H. Chang, TEM of gold-silicon interactions on the backside of silicon wafers, J. Appl Phys., 63 (1988) 1473-1477.
    • (1988) J. Appl Phys. , vol.63 , pp. 1473-1477
    • Chang, P.H.1
  • 30
    • 0000477034 scopus 로고
    • Double cantilever cleavage made of crack propagation
    • P.P. Gillis and J.J. Oilman, Double cantilever cleavage made of crack propagation, J. Appl. Phys., 35 (1964) 647-658.
    • (1964) J. Appl. Phys. , vol.35 , pp. 647-658
    • Gillis, P.P.1    Oilman, J.J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.