Fluxless wafer bonding in vacuum using electroplated Sn-Ag layers

IEEE Transactions on Electronics Packaging Manufacturing

Volumn 30, Issue 2, 2007, Pages 155-159

  Wang, Pinjan ^a   Kim, Jong Sung ^a   Lee, Chin C ^a  

^a University of California at Irvine   (United States)

Author keywords

Fluxless bonding; Fluxless soldering; Tin silver solders; Wafer bonding

Indexed keywords

BONDING LAYERS; CAPPING LAYERS; ELECTRONIC INDUSTRIES; ENERGY DISPERSIVE X-RAY SPECTROSCOPIES; FLUXING PROCESS; FLUXLESS; FLUXLESS BONDING; FLUXLESS SOLDERING; HIGH QUALITIES; IN VACUUMS; JOINT QUALITIES; NEW DEVICES; OR FLUXES; PACKAGING APPLICATIONS; SCANNING ACOUSTIC MICROSCOPIES; SEM; SI WAFERS; SN-AG SOLDERS; SOLDER JOINTS; SOLDER LAYERS; SOLDERING PROCESS; UNDER-BUMP METALLURGIES; VOID-FREE; WAFER-TO-WAFER BONDINGS;

ACOUSTIC MICROSCOPES; ACOUSTIC SPECTROSCOPY; BRAZING; ELECTRONICS PACKAGING; FURNACES; GOLD; OXIDATION; PACKAGING MATERIALS; SCANNING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; SILVER; SOLDERING ALLOYS; TIN; TITANIUM COMPOUNDS; VACUUM; VACUUM FURNACES; WELDING;

WAFER BONDING;

EID: 65449142874     PISSN: 1521334X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TEPM.2007.899117     Document Type: Article

References (23)

1. M. Koyanagi, H. Kurino, K. W. Lee, K. Sakuma, N. Miyakawa, and H. Itani, "Future system-on-silicon LSI chips," IEEE Micro, vol. 18, no. 4, pp. 17-22, Jul./Aug. 1998.
2. A. Fan, A. Rahman, and R. Reif, "Copper wafer bonding," Electrochem. Solid-State Lett., vol. 2, pp. 534-536, 1999.
3. F. Niklaus, R. J. Kumar, J. J.McMahon, J. Yu, J. Q. Lu, T. S. Cale, and R. J. Gutmann, "Adhesive wafer bonding using partially cured benzocyclobutene for three-dimensional integration," J. Electrochem. Soc., vol. 153, pp. G291-G295, 2006.
4. M. A. Schmidt, "Wafer-to-Wafer bonding for microstructure formation," Proc. IEEE, vol. 86, no. 8, pp. 1575-1585, Aug. 1998.
5. S. C. Hsu and C. Y. Liu, "Fabrication of thin-GaN LED structures by Au-Si wafer bonding," Electrochem. Solid-State Lett., vol. 9, pp. G171-G171, 2006.
6. H. C. Lin, K. L. Chang, K. C. Hsieh, K. Y. Cheng, and W. H. Wang, "Metallic wafer bonding for the fabrication of long-wavelength vertical-cavity surface-emitting lasers," J. Appl. Phys., vol. 92, pp. 4132-4132, 2002.
7. Z.-H. Zhu, F. E. Ejeckam, Y. Qian, J. Zhang, Z. Zhang, G. L. Christenson, and Y. H. Lo, "Wafer bonding technology and its applications in optoelectronic devices and materials," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 3, pp. 927-936, Jun. 1997.
8. J. Haisma and G. A. C. M. Spierings, "Contact bonding, including direct-bonding in a historical and recent context of materials science and technology, physics and chemistry - Historical review in a broader scope and comparative outlook," Mater. Sci. Eng. R-Reports, vol. 37, pp. 1-60, Apr. 2002.
9. B. Muller and A. Stoffel, "Tensile strength characterization of low-temperature fusion-bonded silicon wafers," J. Micromech. Microeng., vol. 1, pp. 191-191, 1991.
10. T. Rogers and J. Kowal, "Selection of glass, anodic bonding conditions and material compatibility for silicon-glass capacitive sensors," Sens. Actuators A, vol. 46-47, pp. 113-113, 1995.
11. J. Wei, S. M. L. Nai, C. K. Wong, and L. C. Lee, "Glass-to-glass anodic bonding process and electrostatic force," Thin Solid Films, vol. 462-463, pp. 487-487, 2004.
12. G. Willis and D. I. Pomerantz, "Field assisted glass-metal sealing," J. Appl. Phys., vol. 40, pp. 3946-3946, Sep. 1969.
13. R. F. Wolffenbuttel and K. D.Wise, "Low temperature silicon wafer-to-wafer bonding using gold at eutectic temperature," Sens. Actuators, vol. A 43, pp. 223-229, 1994.
14. R. F. Wolffenbuttel, "Low-temperature intermediate Au-Si wafer bonding; eutectic or silicide bond," Sens. Actuators, vol. A 62, pp. 680-686, 1997.
15. S. M. L. Nai, J. Wei, P. C. Lim, and C. K. Wong, "Silicon-to-Silicon wafer bonding with gold as intermediate layer," in Electron. Packag. Technol. Conf., 2003, pp. 119-124.
16. G. S. Matijasevic, C. C. Lee, and C. Y. Wang, "Gold-Tin alloy phase diagram and properties related to its use as a bond medium," Thin Solid Films, vol. 223, pp. 276-287, Feb. 1993.
17. C. C. Lee, C. Y. Wang, and G. S. Matijasevic, "A new bonding technology using gold and tin multilayer composite structures," IEEE Trans. Compon., Hybrids, Manuf. Tech., vol. 14, no. 2, pp. 407-412, Jun. 1991.
18. C. C. Lee, C. Y. Wang, and G. S. Matijasevic, "Gold-indium alloy bonding below the eutectic temperature," IEEE Trans. Compon., Hybrids, Manuf. Tech., vol. 16, no. 2, pp. 311-316, May 1993.
19. G. S. Matijasevic, Y. C. Chen, and C. C. Lee, "Copper-tin multilayer composite solder for fluxless processing," Int. J. Microcircuits Electron. Packag., vol. 17, pp. 108-117, 1994.
20. J. Kim, D. Kim, and C. C. Lee, "Fluxless flip-chip solder joint fabrication using electroplated Sn-rich Sn-Au structures," IEEE Trans. Adv. Packag., vol. 29, no. 3, pp. 473-473, Aug. 2006.
21. Metal Handbook T. Lyman and H. E. Boyer, Eds. Metal Park, OH: American Society for Metals, 1973, vol. 8, pp. 256-256.
22. J. S. Kim and C. C. Lee, "Fluxless Sn-Ag bonding in vacuum using electroplated layer," Mater. Sci. Eng. A, vol. 448, pp. 345-350, 2007.
23. 195Au in liquid Sn," Phys. Rev. B, vol. 21, pp. 5447-5447, 1980.