Effects of traps formed by threading dislocations on off-state breakdown characteristics in GaN buffer layer in AiGaN/GaN heterostructure field-effect transistors

Applied Physics Express

Volumn 1, Issue 1, 2008, Pages

  Hinoki, Akihiro ^a   Kikawa, Junjiroh ^b   Yamada, Tomoyuki ^b   Tsuchiya, Tadayoshi ^b   Kamiya, Shinichi ^b   Kurouchi, Masahito ^b   Kosaka, Kenichi ^a   Araki, Tsutomu ^a   Suzuki, Akira ^a,b   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; FIELD EFFECT TRANSISTORS; GALLIUM NITRIDE; IONIZATION OF GASES; MESFET DEVICES; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; TRANSISTORS;

AIGAN/GAN; BREAK DOWN VOLTAGES; BREAKDOWN CHARACTERISTICS; GAN BUFFER LAYERS; GAN LAYERS; HETEROSTRUCTURE; METAL ORGANIC; SIC SUBSTRATES; SPACE-CHARGE-LIMITED CURRENTS; THREADING DISLOCATIONS; TRANSMISSION ELECTRON MICROSCOPY OBSERVATIONS; TRAP DENSITIES;

GALLIUM ALLOYS;

EID: 57049095049     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.1.011103     Document Type: Article

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