Catalyst-free ZnO nanowires grown on a-plane GaN

Vacuum

Volumn 84, Issue 6, 2010, Pages 803-806

  Chen, C W ^a   Pan, C J ^a   Tsao, F C ^a   Liu, Y L ^a   Kuo, C W ^a   Kuo, C H ^a   Chi, G C ^a   Chen, P H ^b   Lai, W C ^b   Hsueh, T H ^b   Tun, C J ^c   Chang, C Y ^d   Pearton, S J ^d   Ren, F ^d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c NATIONAL SYNCHROTRON RADIATION RESEARCH CENTER   (Taiwan)

^d J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

ZnO nanowires

Indexed keywords

A-PLANE; A-PLANE GAN; BASAL PLANES; CATALYST-FREE; GROWTH MECHANISMS; HETEROEPITAXIAL RELATIONSHIPS; METAL-ORGANIC; NEAR BAND EDGE EMISSIONS; PHOTOLUMINESCENCE SPECTRUM; PLANE ORIENTATION; PLANE SAPPHIRE; STRANSKI-KRASTANOW MODE; ZNO; ZNO LAYERS; ZNO NANOWIRES;

CATALYSIS; CATALYSTS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDE; NANOWIRES; SEMICONDUCTING GALLIUM COMPOUNDS; X RAY DIFFRACTION; ZINC OXIDE;

GALLIUM ALLOYS;

EID: 75049085823     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.10.043     Document Type: Article

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