Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices

Chinese Physics B

Volumn 19, Issue 1, 2010, Pages

  Wang, Liang Ji ^a   Zhang, Shu Ming ^a   Zhu, Ji Hong ^a   Zhu, Jian Jun ^a   Zhao, De Gang ^a   Liu, Zong Shun ^a   Jiang, De Sheng ^a   Wang, Yu Tian ^a   Yang, Hui ^a,b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS   (China)

Author keywords

GaN; Leakage current; Light emitting diode; Surface treatment

Indexed keywords

AQUA REGIA; ELECTRICAL PROPERTY; FILM DEPOSITION; GAN; GAN LAYERS; GAN-BASED LIGHT-EMITTING DIODES; INGAN/GAN; LOW RESISTANCE; METAL ATOMS; MULTIPLE QUANTUM WELLS; P-TYPE GAN; THREADING DISLOCATION; TRANSPARENT ELECTRODE; X RAY ROCKING CURVE;

CURRENT VOLTAGE CHARACTERISTICS; DEFECT DENSITY; DIODES; ELECTRIC PROPERTIES; GALLIUM ALLOYS; GALLIUM NITRIDE; LEAKAGE CURRENTS; LIGHT EMISSION; LIGHT EMITTING DIODES; OHMIC CONTACTS; PHOTODEGRADATION; PHYSICAL OPTICS; SCREW DISLOCATIONS; SEMICONDUCTOR QUANTUM WELLS; SURFACE MORPHOLOGY; WATER ANALYSIS;

SURFACE TREATMENT;

EID: 74849117851     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/19/1/017307     Document Type: Article

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