Analysis of the relation between leakage current and dislocations in GaN-based light-emitting devices

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 1, 2007, Pages 37-40

  Lee, S W ^a   Oh, D C ^b   Goto, H ^a   Ha, J S ^a   Lee, H J ^a   Hanada, T ^b   Cho, M W ^b   Hong, S K ^c   Lee, H Y ^d   Cho, S R ^e   Choi, J W ^e   Choi, J H ^e   Jang, J H ^e   Shin, J E ^e   Lee, J S ^e   Yao, T ^a,b  

^a TOHOKU UNIVERSITY   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

^c Chungnam National University   (South Korea)

^d Chonnam National University   (South Korea)

^e LG Electronics Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BLUE LASERS; DISLOCATION DENSITIES; GAN TEMPLATES; INTERNATIONAL SYMPOSIUM; LIGHT-EMITTING DEVICES;

GALLIUM ALLOYS; GALLIUM NITRIDE; LASERS; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; LIGHT SOURCES; ORGANIC LIGHT EMITTING DIODES (OLED); SEMICONDUCTING GALLIUM;

LIGHT EMISSION;

EID: 34848824623     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200673552     Document Type: Conference Paper

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