High power and high reliability GaN/InGaN flip-chip light-emitting diodes

Chinese Physics

Volumn 16, Issue 4, 2007, Pages 1135-1139

  Zhang, Jian Ming ^a   Zou, De Shu ^a   Xu, Chen ^a   Zhu, Yan Xu ^a   Liang, Ting ^a   Da, Xiao Li ^a   Shen, Guang Di ^a  

^a BEIJING UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Flip chip; GaN; High power; Light emitting diode

Indexed keywords

ELECTROSTATIC DISCHARGE; FLIP CHIP DEVICES; GALLIUM NITRIDE; SAPPHIRE;

HUMAN BODY MODEL; POWER DEGRADATION;

LIGHT EMITTING DIODES;

EID: 34250199759     PISSN: 10091963     EISSN: 17414199     Source Type: Journal    
DOI: 10.1088/1009-1963/16/4/046     Document Type: Article

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