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Volumn 4, Issue 7, 2007, Pages 2646-2649
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Comparison of Ni/Au, ITO, and ATO-based current spreading layers for near-ultraviolet light-emitting diodes
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Author keywords
[No Author keywords available]
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Indexed keywords
CURRENT SPREADING;
FORWARD VOLTAGE;
HIGH TRANSMITTANCE;
III NITRIDES;
LIGHT OUTPUT POWER;
NI/AU CONTACTS;
NITRIDE SEMICONDUCTORS;
OPTICAL TRANSMITTANCE;
POTENTIAL APPLICABILITY;
SHORT WAVELENGTHS;
ULTRAVIOLET LIGHT-EMITTING DIODES;
UV LEDS;
ANNEALING;
CRYSTALS;
ELECTRIC CONDUCTIVITY;
LIGHT EMISSION;
LIGHT EMITTING DIODES;
NICKEL;
NITRIDES;
SEMICONDUCTOR DIODES;
SEMICONDUCTOR MATERIALS;
SILVER;
ULTRAVIOLET INSTRUMENTS;
ULTRAVIOLET RADIATION;
CURRENT VOLTAGE CHARACTERISTICS;
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EID: 49749087947
PISSN: 18626351
EISSN: None
Source Type: Journal
DOI: 10.1002/pssc.200674892 Document Type: Conference Paper |
Times cited : (6)
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References (10)
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