Influence of annealing temperature on the properties of ZnO:Zr films deposited by direct current magnetron sputtering

Vacuum

Volumn 84, Issue 6, 2010, Pages 833-836

  Zhang, Huafu ^a   Liu, Hanfa ^a   Feng, Liu ^a  

^a SHANDONG UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Annealing temperature; DC magnetron sputtering; Thin films; Zirconium doped zinc oxide

Indexed keywords

CONDUCTIVE FILMS; II-VI SEMICONDUCTORS; MAGNETRON SPUTTERING; OPTICAL PROPERTIES; OXIDE FILMS; THIN FILMS; ZINC OXIDE; ZIRCONIUM COMPOUNDS;

ANNEALING TEMPERATURES; DC MAGNETRON SPUTTERING; DIRECT CURRENT MAGNETRON SPUTTERING; ELECTRICAL AND OPTICAL PROPERTIES; HIGH TRANSMITTANCE; POST-ANNEALING TEMPERATURE; QUARTZ SUBSTRATE; ZIRCONIUM-DOPED ZINC OXIDES;

ANNEALING;

EID: 74649084105     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2009.11.005     Document Type: Article

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