In situ characterization of GaAs growth in nitrogen atmosphere during MOVPE: A comparison to hydrogen atmosphere

Journal of Crystal Growth

Volumn 195, Issue 1-4, 1998, Pages 211-216

  Hardtdegen, H ^a   Pristovsek, M ^b   Menhal, H ^b   Zettler, J T ^b   Richter, W ^b   Schmitz, D ^c  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c AIXTRON AG   (Germany)

Author keywords

Carrier gas; GaAs; MOVPE; Nitrogen ambient; RAS

Indexed keywords

DESORPTION; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; SEMICONDUCTOR GROWTH; SPECTROSCOPIC ANALYSIS;

REFLECTANCE ANISOTROPY SPECTROSCOPY (RAS);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0032477230     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00705-2     Document Type: Article

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