Superconductivity and mixed-state characteristic of InN films by metal-organic vapor phase epitaxy

Diamond and Related Materials

Volumn 15, Issue 4-8, 2006, Pages 1179-1183

  Chang, P H ^a   Liang, C T ^b   Chen, N C ^a   Huang, T Y ^b   Chen, Y F ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

InN; Mixed state; Superconductivity

Indexed keywords

CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; HALL EFFECT; MAGNETORESISTANCE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OSCILLATIONS; PHASE TRANSITIONS; SHUBNIKOV-DE HAAS EFFECT; SILICON; SUBSTRATES; SUPERCONDUCTIVITY; THIN FILMS; VAPOR PHASE EPITAXY;

ELECTRONICS SYSTEM; FLUX DYNAMICS; INN; MIXED STATE; POSITIVE MAGNETORESISTANCE (PMR);

INDIUM COMPOUNDS;

EID: 33745270008     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.12.059     Document Type: Article

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