Impact of organic acid and gas bubbling on copper and copper oxide etch-rates in diluted HF solution

Solid State Phenomena

Volumn 134, Issue , 2008, Pages 333-336

  Rebiscoul D ^a   Lopez, N ^a   Broussous, L ^b   Louis, D ^a   Passemard, G ^b  

^a CEA GRENOBLE   (France)

^b STMICROELECTRONICS   (France)

Author keywords

Copper; Organic acid; Post etch cleaning

Indexed keywords

EID: 38549177451     PISSN: 10120394     EISSN: 16629779     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/SSP.134.333     Document Type: Conference Paper

References (8)

1. M. R. Baklanov, Q. T. Le, E. Kesters, F. Iacopi, J. Van Aelst, H. Struyf, W. Boullart, S. Vanhaelemeersch and K. Maex, Proceedings of IITC2004 conference, San Francisco, (2004).
2. D. Rebiscoul, B. Puyrenier, L. Broussous, D. Louis, G. Passemard, Proceedings of MAM2006 conference, Grenoble, (2007).
3. D. Rebiscoul, L. Broussous, D. Louis, G. Passemard-ECS transactions-Cleaning Technology in Semicondutor Device Manufacturing IX, 1, 3, (2005) p. 365.
4. A. van der Lee, Sol. State Sci., 2, 257 (2000).
5. Ober, Firefx4c_6: raymond. ober@college-de-france. fr.
6. I. G. Parrat Phys. Rev. 95, 359 (1954).
7. http://chess. ensmp. fr.
8. http://chess. ensmp. fr/databases. html.