Effect of ytterbium doping on the optical and electrical properties of intrinsic In2O3 thin films

Microelectronics Reliability

Volumn 50, Issue 2, 2010, Pages 211-216

  Dakhel, A A ^a  

^a UNIVERSITY OF BAHRAIN   (Bahrain)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; CRYSTALLINE STRUCTURE; ELECTRICAL MEASUREMENT; EXPERIMENTAL DATA; HIGH-K INSULATORS; INSULATING PROPERTIES; METAL INSULATOR SILICONS; OPTICAL AND ELECTRICAL PROPERTIES; OPTICAL BEHAVIOUR; UV-VIS-NIR ABSORPTION; VACUUM EVAPORATION METHOD; WAFER SUBSTRATES; WIDE BAND SEMICONDUCTORS; X RAY FLUORESCENCE; YTTERBIUM DOPING; YTTERBIUM-DOPED;

ABSORPTION SPECTROSCOPY; FILM PREPARATION; INSULATION; METAL INSULATOR BOUNDARIES; OPTICAL PROPERTIES; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SILICON WAFERS; THIN FILMS; VACUUM EVAPORATION; YTTERBIUM;

ELECTRIC PROPERTIES;

EID: 74449083120     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2009.11.007     Document Type: Article

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