Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage

ECS Transactions

Volumn 25, Issue 7, 2009, Pages 211-216

  Koh, S M ^b   Zhou, W J ^a   Lee, R T P ^a   Sinha, M ^a   Ng, C M ^b   Zhao, Z ^c   Maynard, H ^c   Variam, N ^c   Erokhin, Y ^c   Samudra, G ^a   Yeo, Y C ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^c VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BUDGET CONTROL; CARBON; NICKEL; NICKEL COMPOUNDS; SCHOTTKY BARRIER DIODES; SILICIDES; SILICON;

DOPANT SEGREGATION; LOW THERMAL BUDGET; NICKEL ALUMINIDES; PARASITIC RESISTANCES; SCHOTTKY BARRIER HEIGHTS; SEGREGATED REGIONS; SOLID PHASE EPITAXY; SUBSTITUTIONAL INCORPORATION;

SEMICONDUCTOR METAL BOUNDARIES;

EID: 74349108967     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3203958     Document Type: Conference Paper

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