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Volumn 68, Issue 4, 1996, Pages 499-501

Effects of carbon implantation on generation lifetime in silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0011951370     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.116379     Document Type: Article
Times cited : (18)

References (14)
  • 8
    • 21544443259 scopus 로고    scopus 로고
    • B. O. Kolbesen, in Aggregation Phenomena of Point Defects in Silicon, edited by E. Sirtl and J. Goorissen (The Electrochemical Society, Princeton, NJ, 1983), pp. 155-175.
    • B. O. Kolbesen, in Aggregation Phenomena of Point Defects in Silicon, edited by E. Sirtl and J. Goorissen (The Electrochemical Society, Princeton, NJ, 1983), pp. 155-175.
  • 11
    • 0026980953 scopus 로고    scopus 로고
    • S. Nishikawa and T. Yamaji, in Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 1992 (unpublished), pp. 26-28.
    • S. Nishikawa and T. Yamaji, in Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials, 1992 (unpublished), pp. 26-28.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.