Monte Carlo-based analytical models for electron and hole electrical parameters in strained SiGeC alloys

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2009, Pages

  Michaillat, Marc ^a,b   Rideau, Denis ^a   Aniel, Frédéric ^b   Tavernier, Clément ^a   Jaouen, Hervé ^a  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL MODEL; ELECTRICAL PARAMETER; ELECTRICAL PROPERTY; ENERGY RELAXATION TIME; FULL-BAND MONTE CARLO; HOLE TRANSPORTS; LOW FIELD MOBILITY; MINORITY CARRIER; MONTE CARLO; SATURATION VELOCITY; SIGEC ALLOY; STRAINED-SI; TRANSPORT PARAMETERS;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; CERIUM ALLOYS; COMPUTER SIMULATION; GERMANIUM; MODELS; MONTE CARLO METHODS; SEMICONDUCTOR DEVICES; SILICON ALLOYS; TRANSPORT PROPERTIES;

ELECTRIC PROPERTIES;

EID: 74349098095     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SISPAD.2009.5290249     Document Type: Conference Paper

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