Theoretical study of electron mobility for silicon-carbon alloys

Applied Surface Science

Volumn 254, Issue 19, 2008, Pages 6203-6207

  Chang, S T ^a   Lin, C Y ^a   Liao, S H ^a,b  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b CHUNG CHOU INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

Alloy scattering; Impurity scattering; Mobility; Silicon carbon alloy; Strain

Indexed keywords

CARRIER MOBILITY; ELECTRON MOBILITY; ELECTRONS; STRAIN;

ALLOY SCATTERING; CARBON CONTENT; DOPING CONCENTRATION; IMPURITY SCATTERING; LOW DOPING CONCENTRATIONS; MOLE FRACTION; SILICON CARBON ALLOYS; THEORETICAL STUDY;

SILICON ALLOYS;

EID: 45049088750     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.02.174     Document Type: Article

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