Photoluminescence and TEM evaluations of defects generated during SiGe-on-insulator virtual substrate fabrication: Temperature ramping process

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 253, Issue 1-2, 2006, Pages 31-36

  Wang, D ^a   Ii, S ^a   Ikeda, K ^a   Nakashima, H ^a,a   Matsumoto, K ^b   Nakamae, M ^b  

^a KYUSHU UNIVERSITY   (Japan)

^b SUMCO CORPORATION   (Japan)

Author keywords

Dislocation; Photoluminescence; SiGe on insulator; Stacking fault; TEM

Indexed keywords

ELECTRIC INSULATION; OXIDATION; PHOTOLUMINESCENCE; SILICON COMPOUNDS; SILICON WAFERS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

ANNEALING TEMPERATURE; DISLOCATION; SIGE-ON-INSULATOR; STACKING FAULT;

DEFECTS;

EID: 33751327347     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.10.009     Document Type: Article

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