Growth and photoluminescence of high quality SiGeC random alloys on silicon substrates

Journal of Applied Physics

Volumn 80, Issue 5, 1996, Pages 3043-3047

  Liu, C W ^a,e   St Amour, A ^a   Sturm, J C ^a   Lacroix, Y R J ^b   Thewalt, M L W ^b   Magee, C W ^c   Eaglesham, D ^d  

^a Princeton University   (United States)

^b SIMON FRASER UNIVERSITY   (Canada)

^c Evans East   (United States)

^d LUCENT TECHNOLOGIES   (United States)

^e NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001010184     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.363163     Document Type: Article

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