A new design of the SiC light-activated Darlington power transistor

Microelectronic Engineering

Volumn 83, Issue 1 SPEC. ISS., 2006, Pages 189-192

  Chen, Z M ^a   Pu, H B ^a   Lu Z ^a   Ren, P ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Darlington transistor; Heterojunction; SiC; SiCGe

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SWITCHES; HETEROJUNCTIONS; PHOTODIODES; TRANSISTORS;

DARLINGTON TRANSISTOR; HETEROJUNCTION PHOTODIODE; SICGE;

SILICON CARBIDE;

EID: 30344432950     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.10.047     Document Type: Conference Paper

References (8)

1. Z.M. Chen, H.B. Pu, and F.R. Beyette Jr. Chinese Phys. Lett. 20 2003 430
2. K.J. Roe, G. Katulka, J. Kolodzey, S.E. Saddow, and D. Jacobson Appl. Phys. Lett. 78 2001 2073
3. F.Y. Huang, S.G. Thomas, M. Chu, and K.L. Wang IEDM Tech. Dig. 1996 665
4. Y. Tang, and T.P. Chow Proc. Intern. Symp. Power Semicon. Devices and ICs 2003 383
5. B.A. Orner J. Appl. Phys. 81 10 1997 6773
6. J.I. Pankov Optical Processes in Semiconductors 1971 Prentice-Hall Englewood Clifts p. 38
7. Z. Lü, Z.M. Chen, and H.B. Pu Chinese Phys. 14 2005 1255
8. M. Ruff IEEE Trans. Electron Dev. 41 1994 1040