Effect of Ge doping on the creation of luminescent radiation defects in MBE Si

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 248, Issue 1, 2006, Pages 127-132

  Ankiewicz, A O ^a   Sobolev, N A ^a   Leitao J P ^a   Carmo, M C ^a   Pereira, R N ^b   Hansen, J Lundsgaard ^b   Larsen, A Nylandsted ^b  

^a UNIVERSITY OF AVEIRO   (Portugal)

^b AARHUS UNIVERSITY   (Denmark)

Author keywords

Ge doped Si; Photoluminescence; Radiation defects; SiGe alloys

Indexed keywords

BAND STRUCTURE; CRYSTAL DEFECTS; GERMANIUM; IRRADIATION; LUMINESCENCE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RADIATION; SEMICONDUCTOR DOPING; SPECTROSCOPIC ANALYSIS;

GAP SHRINKAGE; GE-DOPED SI; NEAR BAND EDGE (NBE); PHOTOLUMINESCENCE (PL) SPECTROSCOPY; RADIATION DEFECTS; SIGE ALLOYS;

SILICON ALLOYS;

EID: 33744912995     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.068     Document Type: Article

References (18)

1. Watkins G.D. IEEE Trans. Nucl. Sci. NS-16 (1969) 13
2. Voevodova A.V., Korshunov F.P., Sobolev N.A., and Stuk A.A. Fiz. Tekhn. Poluprov. 23 (1989) 1696 [Sov. Phys.-Semicond. 23 (1989) 1049]
3. In: Sumino K. (Ed). Defect Control in Semiconductor Vol. 1 (1990), North-Holland, Amsterdam 387
4. Sobolev N.A., and Nazaré M.H. Physica B 273-274 (1999) 271
5. In: Ziegler J.F., Biersack J.P., and Littmark U. (Eds). The Stopping and Range of Ions in Solids (1985), Pergamon Press, New York
6. Knights A.P., Malik F., and Coleman P.G. Appl. Phys. Lett. 75 (1999) 466
7. Davies G. Phys. Rep. 176 (1989) 83
8. R. Sauer, in: Landolt-Börnstein, Bd. 22b, Springer, Berlin, 1989, p. 338.
9. Coomer B.J., Goss J.P., Jones R., Öberg S., and Briddon P.R. J. Phys.: Condens. Matter 13 (2001) L1
10. Safonov A.N., and Lightowlers E.C. Mater. Sci. Eng. B 58 (1999) 39
11. As to a review of the radiative recombination in MBE grown silicon and the role of native defects in it, see e.g. Lightowlers E.C., Higgs V., Gregson M.J., et al. Thin Solid Films 183 (1989) 235
12. Hourahine B., Jones R., Safonov A.N., Öberg S., Briddon P.R., and Estreicher S.K. Phys. Rev. B 61 (2000) 12594
13. Budde M., Bech Nielsen B., Keay J.C., and Feldman L.C. Physica B 273-274 (1999) 208
14. Sauer R., and Weber J. Physica 116B (1983) 195
15. Korshunov F.P., Sobolev N.A., and Shearukhov V.A. In: Sumino K. (Ed). Defect Control in Semiconductor Vol. 1 (1990), North-Holland, Amsterdam 559
16. Lopatin A.B., and Pokrovskii Ya.E. Fiz. Tverd. Tela 28 (1986) 2373 [Sov. Phys.-Solid State 28 (1986) 1327]
17. Weber J., and Alonso M.I. Phys. Rev. B 40 (1989) 5683
18. Korshunov F.P., Sobolev N.A., and Shearukhov V.A. J. Appl. Spectrosc. 51 (1989) 797