Analysis of C 60 + and Cs + sputtering ions for depth profiling gold/silicon and GaAs multilayer samples by time of flight secondary ion mass spectrometry

Applied Surface Science

Volumn 256, Issue 7, 2010, Pages 2044-2051

  Goacher, Robyn E ^a   Gardella Jr , Joseph A ^a  

^a UNIVERSITY AT BUFFALO   (United States)

Author keywords

Au; C 60 cluster ions; Cs ions; GaAs; Si; ToF SIMS

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; DEPTH PROFILING; GALLIUM ARSENIDE; GOLD; III-V SEMICONDUCTORS; INDIUM ARSENIDE; IONS; MULTILAYERS; ORGANIC POLYMERS; SECONDARY EMISSION; SEMICONDUCTING GALLIUM; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR ALLOYS; SILICON; SPUTTERING;

CLUSTER IONS; DEPTH RESOLUTION; GAAS; LAYERED SAMPLE; SEMICONDUCTOR INTERFACES; SPUTTER YIELDS; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TOF SIMS;

SECONDARY ION MASS SPECTROMETRY;

EID: 74149086241     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.09.045     Document Type: Article

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