Manganese diffusion in MBE-grown Cd(Mn) Te structures

Journal of Crystal Growth

Volumn 159, Issue 1-4, 1996, Pages 980-984

  Barcz, A ^a   Karczewski, G ^b   Wojtowicz, T ^b   Kossut, J ^b  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

^b INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; DIFFUSION; INTERDIFFUSION (SOLIDS); INTERFACES (MATERIALS); MANGANESE; MOLECULAR BEAM EPITAXY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING CADMIUM COMPOUNDS; SEMICONDUCTING FILMS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

ARRHENIUS PLOT; DIFFUSION COEFFICIENT; DIFFUSIVITY; FICK LAW; INTERMIXING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030562186     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00840-3     Document Type: Article

References (9)

1. D. Shaw, J. Crystal Growth 86 (1988) 778.
2. D. Shaw, in: Widegap II-VI Compounds of Opto-electronics Application, Ed. H.E. Ruda (Chapman and Hall, London, 1992) p. 245.
3. P.M. Borsenberger and D.A. Stevenson, J. Chem. Solids 29 (1968) 1277.
4. D. Tönnies, G. Bacher, A. Forcher, A. Waag and G. Landwehr, Appl. Phys. Lett. 64 (1994) 766.
5. P. Kossacki, Nguyen The Khoi, J.A. Gaj, G. Karczewski, T. Wojtowicz, J. Kossut and K.V. Rao, Solid State Commun. 94 (1995) 439.
6. T.Y. Tan and U. Gösele, J. Appl. Phys. 61 (1987) 1841.
7. P. Mei, H.W. Yoon, T. Venkatesan, S.A. Schwarz and J.P. Harbison, Appl. Phys. Lett. 50 (1987) 1823.
8. W. Shockley and J.T. Last, Phys. Rev. 107 (1957) 392.
9. G. Karczewski, A.K. Zakrzewski, L. Dobaczewski, W. Dobrowolski, E. Grodzicka, J. Jaroszyński, T. Wojtowicz and J. Kossut, Thin Solid Films, in press.