Improvement of PECVD silicon-germanium crystallization for cmos compatible MEMS applications

Journal of the Electrochemical Society

Volumn 157, Issue 2, 2010, Pages

  Guo, Bin ^a   Severi, Simone ^a   Bryce, George ^a   Claes, Gert ^a   Van Hoof, Rita ^a   Du Bois, Bert ^a   Haspeslagh, Luc ^a   Witvrouw, Ann ^a   Decoutere, Stefaan ^a  

^a IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

BORON-DOPED; BORON-DOPING; CHAMBER PRESSURE; CMOS COMPATIBLE MEMS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONSTANT TEMPERATURE; CRYSTALLINITIES; ELECTRODE SPACING; GAS FLOWS; IN-SITU; MICROELECTROMECHANICAL SYSTEMS; MICROSTRUCTURE CHANGES; POLY-CRYSTALLINE SILICON; POLY-SIGE; POLY-SIGE DEPOSITION; POLYCRYSTALLINE; PROCESS WINDOW; SI-GE FILMS; SILICON GERMANIUM;

AERODYNAMICS; BORON; CHEMICAL VAPOR DEPOSITION; COMPOSITE MICROMECHANICS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; FLOW OF GASES; GERMANIUM; ION BOMBARDMENT; MEMS; METALLIC COMPOUNDS; METALLIC GLASS; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; MOS DEVICES; PLASMA DEPOSITION; POLYSILICON; SILICON ALLOYS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 73849129534     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3269922     Document Type: Article

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