Structural and magnetic changes in MgO-based magnetic tunneling junctions during the early stages of annealing

Journal of Magnetism and Magnetic Materials

Volumn 322, Issue 6, 2010, Pages 756-761

  Anderson, G I R ^a   Wei, H X ^b   Porter, N A ^a   Arena, D A ^c   Dvorak, J ^d   Han, X F ^b   Marrows, C H ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

^b INSTITUTE OF PHYSICS   (China)

^c BROOKHAVEN NATIONAL LABORATORY   (United States)

^d MONTANA STATE UNIVERSITY   (United States)

Author keywords

Magnetic tunnel junction; Soft X ray magnetic scattering; Tunneling magnetoresistance

Indexed keywords

ANNEALING CYCLES; AS-GROWN; BARRIER RESISTANCE; CRYSTALLOGRAPHIC TEXTURES; HIGHER TEMPERATURES; HOTSPOTS; INITIAL STAGES; LENGTH SCALE; MAGNETIC CHANGES; MAGNETIC INTERFACES; MAGNETIC TUNNEL JUNCTION; MAGNETIC TUNNELING JUNCTIONS; MAGNETORESISTANCE RATIO; MAGNETOTRANSPORTS; MGO BARRIER; SCATTERING DATA; SOFT X-RAY; SOFT X-RAY RESONANT MAGNETIC SCATTERING; STATE RESISTANCE; TUNNELING MAGNETORESISTANCE; VOLTAGE BIAS; VOLTAGE CHARACTERISTICS;

ANNEALING; COBALT COMPOUNDS; ELECTRIC RESISTANCE; ELECTRODES; MAGNETIC DEVICES; MAGNETIC FIELD EFFECTS; MAGNETIC MATERIALS; MAGNETISM; MAGNETOELECTRONICS; MAGNETORESISTANCE; SCATTERING; WIND TUNNELS;

TUNNEL JUNCTIONS;

EID: 73449111268     PISSN: 03048853     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmmm.2009.10.056     Document Type: Article

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