In situ transport measurements of plasma-oxidized MgO magnetic tunnel junctions during the annealing process

Journal of Applied Physics

Volumn 99, Issue 8, 2006, Pages

  Anderson, G I R ^a   Hindmarch, A T ^a   Marrows, C H ^a   Hickey, B J ^a  

^a UNIVERSITY OF LEEDS   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DATA RECORDING; ELECTRODES; FERMI LEVEL; HIGH TEMPERATURE EFFECTS; MAGNESIA; MAGNETIZATION; MAGNETORESISTANCE; MEASUREMENT THEORY; OXIDATION; PLASMAS; TRANSPORT PROPERTIES;

BARRIER PROPERTIES; IN SITU TRANSPORT MEASUREMENTS; PLASMA-OXIDIZED MGO MAGNETIC TUNNEL JUNCTIONS; POSTDEPOSITION ANNEALING;

TUNNEL JUNCTIONS;

EID: 33646740267     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2166601     Document Type: Article

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