Extended time bias stress effects in polymer transistors

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Street, R A ^a   Chabinyc, M L ^a   Endicott, F ^a   Ong, B ^b  

^a PALO ALTO RESEARCH CENTER   (United States)

^b XEROX RESEARCH CENTRE OF CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

DRY NITROGEN; GATE TRANSISTORS; POLYMER TRANSISTORS; PULSED GATE BIAS STRESS;

CARRIER MOBILITY; ELECTRIC PROPERTIES; ENCAPSULATION; SEMICONDUCTING POLYMERS; STABILIZATION; STRESS ANALYSIS; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 33845791610     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2398798     Document Type: Article

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