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Journal of Crystal Growth

Volumn 311, Issue 7, 2009, Pages 1917-1919

High-power and broadly tunable GaSb-based optically pumped VECSELs emitting near 2 μm

(6) Paajaste, Jonna a Suomalainen, Soile a Koskinen, Riku a Härkönen, Antti a Guina, Mircea a Pessa, Markus a

a TAMPERE UNIVERSITY OF TECHNOLOGY (Finland)

Author keywords

A3. Molecular beam epitaxy; B1. Antimonides; B2. Semiconducting III V materials; B3. Infrared devices

Indexed keywords

CRYSTAL GROWTH; FIBER LASERS; INFRARED DEVICES; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; MOLECULAR DYNAMICS; QUANTUM WELL LASERS; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SURFACE EMITTING LASERS; TUNING; WELLS;

A3. MOLECULAR BEAM EPITAXY; B1. ANTIMONIDES; B2. SEMICONDUCTING III-V MATERIALS; B3. INFRARED DEVICES; CONTINUOUS WAVES; GAIN STRUCTURES; HIGH-POWER; HIGH-POWER OPERATIONS; N-DOPED; OPTICALLY PUMPED; OUTPUT POWER; QUANTUM WELLS; ROOM TEMPERATURES; SPECTRAL TUNING; TUNING RANGES; VECSEL; VERTICAL-EXTERNAL-CAVITY SURFACE-EMITTING LASERS;

GALLIUM ALLOYS;

EID: 63349111895 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2008.10.071 Document Type: Article

Times cited : (53)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.