Low threshold high-power room-temperature continuous-wave operation diode laser emitting at 2.26 μm

IEEE Photonics Technology Letters

Volumn 16, Issue 5, 2004, Pages 1253-1255

  Garcia, Michel ^a   Salhi, A ^b   Perona A ^b   Rouillard, Y ^b   Sirtori, C ^c   Marcadet, X ^a   Alibert, C ^b  

^a THALES RESEARCH AND TECHNOLOGY   (France)

^b CNRS   (France)

^c UNIVERSITÉ PARIS DESCARTES   (France)

Author keywords

Coatings; Continuous wave (CW) lasers; Fabrication; Ohmic contacts; Semiconductor lasers

Indexed keywords

ANTIREFLECTION COATINGS; CONTINUOUS WAVE LASERS; CURRENT DENSITY; OHMIC CONTACTS; PELTIER EFFECT; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TEMPERATURE;

HIGH INTERNAL QUANTUM EFFICIENCY; LOW THRESHOLD CURRENT DENSITY; THERMOELECTRIC PELTIER COOLING ELEMENT;

SEMICONDUCTOR LASERS;

EID: 2442595862     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2004.826053     Document Type: Article

References (7)

1. D. Z. Garbuzov, H. Lee, V. Khalfin, R. U. Martinelli, J. C. Connolly and G. L. Balenky, "2.3-2.7-μ m room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 794-796 July 1999.
2. H. K. Choi, G. W. Turner, and S. J. Eglash, "High-power GaInAsSb-Al-GaAsSb multiple-quantum-well diode lasers emitting at 1.9 μm," IEEE Photon. Technol. Lett., vol. 6, pp. 7-9, Jan. 1994.
3. D. A. Yarekha, G. Glastre, A. Perona, Y. Rouillard, F. Genty, E. M. Skouri, G. Boissier, P. Grech, A. Joullié, C. Alibert, and A. N. Baranov, "High temperature GaInSbAs/GaAlSbAs quantum well single mode continuous wave lasers emitting near 2.3 μm," Electron. Lett., vol. 36, no. 6, pp. 537-539, 2000.
4. D. Z. Garbuzov, R. U. Martinelli, H. Lee, R. J. Menna, P. K. York, L. A. Dimarco, M. G. Harvey, R. J. Matarese, S. Y. Narayan, and J. C. Connolly, "4 W quasicontinuous-wave output power from 2 μm AlGaAsSb/InGaAsSb single-quantum-well broadened waveguide laser diodes," Appl. Phys. Lett., vol. 70, no. 22, pp. 2931-2933. 1997.
5. H. Kano and K. Sugiyama, "2 μm CW operation of GaInAsSb/GaSb lasers at 80 K," Electron. Lett., vol. 16, no. 4, pp. 146-147, 1980.
6. "Reáalisation et étude de contacts ohmiques Metal GaSb en vue de l'optimisation de diodes lasers infrarouges émettant vers 2 microns," M.S. thesis, University of Montpellier II, 1992.
7. C. Mermelstein, S. Simanowski, M. Meyer, R. Kiefer, J. Schmitz, M. Walther, and J. Wagner, "Room-temperature low-threshold low-loss continuous-wave operation of 2.26 μm GaInAsSb/AlGaAsSb quantum-well laser diodes," Appl. Phys. Lett., vol. 77, pp. 1581-1583, 2000.