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Volumn 143, Issue 2, 2010, Pages 494-499

Body effect minimization using single layer structure for pH-ISFET applications

Author keywords

Body effect; Hafnium oxide; ISFET; MISFET; Silicon nitride

Indexed keywords

BODY EFFECT; COMMERCIAL PRODUCTS; DRIFT COEFFICIENT; EASY FABRICATION; ELECTRICAL CHARACTERISTIC; ELECTRICAL PERFORMANCE; HAFNIUM OXIDE; LOW COSTS; LOWER BODY; METAL-INSULATOR-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; OFF CURRENT; OPERATION SPEED; PH DETECTION; PH SENSING; RADIO FREQUENCIES; READ-OUT CIRCUIT; SENSING MEMBRANES; SENSING PERFORMANCE; SINGLE-LAYER STRUCTURE; SUBTHRESHOLD SWING;

EID: 73149112404     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2009.09.037     Document Type: Article
Times cited : (34)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.